DocumentCode :
1389910
Title :
Performances of a silicon drift chamber as fast scintillator photodetector for gamma-ray spectroscopy
Author :
Fiorini, C. ; Perotti, F. ; Labanti, C.
Author_Institution :
Dipartimento di Elettronica, Politecnico di Milano, Italy
Volume :
45
Issue :
3
fYear :
1998
fDate :
6/1/1998 12:00:00 AM
Firstpage :
483
Lastpage :
486
Abstract :
The performances of a Silicon Drift Chamber (SDC), having a diameter of 3 mm, as scintillation light photodetector have been experimentally evaluated on a prototype of γ-ray detector employing a GSO crystal of similar cross-section. This detector presents a minimum energy threshold of about 50 keV at room temperature (20°C) or 25 keV at 0°C. The measured energy resolution at room temperature is 22.65% and 8.73% FWHM at 122 keV and 662 keV respectively. These performances were obtained by using a shaping time of 0.5 μs which allows to operate at high γ-ray interaction rate. The effect of the SDC drift-time on the detector gain has been also evaluated
Keywords :
drift chambers; gadolinium compounds; silicon radiation detectors; solid scintillation detectors; GSO crystal; Gd2(SiO)4O:Ce; Si; detector gain; drift-time; energy resolution; fast scintillator photodetector; gamma-ray spectroscopy; high γ-ray interaction rate; shaping time; silicon drift chamber; Energy measurement; Energy resolution; Gamma ray detection; Gamma ray detectors; Performance evaluation; Photodetectors; Prototypes; Silicon; Solid scintillation detectors; Temperature;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.682431
Filename :
682431
Link To Document :
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