Deposition of scintillating layers of bismuth germanate (BGO) films for X-ray detector applications

Author

Duan, M. ; Fröjdh, C. ; Thungström, G. ; Wang, L.W. ; Linnros, J. ; Petersson, C.S.

Author_Institution

Dept. of Electron., Kungl. Tekniska Hogskolan, Kista, Sweden

Volume

45

Issue

3

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

525

Lastpage

527

Abstract

Bi₄Ge₃O₁₂ films were deposited by pulsed laser ablation on glass and SiO₂/Si substrates. The crystal structures of the films depend on the deposition temperature. XRD patterns indicate that the films deposited at substrate temperature less than 400°C are amorphous. The as deposited amorphous films can be crystallized by post rapid thermal annealing (RTA) in the temperature window from 750°C to 800°C for 2 minutes in a oxygen ambient environment. RBS measurements confirm that the films have the same chemical composition as that of the target. The surface morphology of the films were characterized by atomic force microscopy (AFM)

Keywords

Rutherford backscattering; X-ray detection; X-ray diffraction; atomic force microscopy; bismuth compounds; crystallisation; pulsed laser deposition; rapid thermal annealing; solid scintillation detectors; surface structure; 2 min; 750 to 800 C; AFM; BGO films; Bi₄Ge₃O₁₂; Bi₄Ge₃O₁₂ films; RBS measurements; Rutherford backscattering; SiO₂-Si; SiO₂/Si substrate; X-ray detection; X-ray detector applications; as deposited amorphous films; atomic force microscopy; chemical composition; crystal structures; crystallization; glass substrate; post rapid thermal annealing; pulsed laser ablation; scintillating layers deposition; surface morphology; Amorphous materials; Atomic force microscopy; Bismuth; Crystallization; Glass; Laser ablation; Optical pulses; Pulsed laser deposition; Semiconductor films; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.682441

Filename

682441