The effect of surface recombination on the frequency-dependent characteristics of an ion-implanted GaAs OPFET

Author

Mishra, Sunita ; Singh, V.K. ; Pal, B.B.

Author_Institution

Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India

Volume

37

Issue

4

fYear

1990

fDate

4/1/1990 12:00:00 AM

Firstpage

942

Lastpage

946

Abstract

The effect of modulation frequency and surface recombination on the characteristics of an ion-implanted GaAs OPFET is determined analytically. The drain-source current is found to decrease with the increase in both modulation frequency and trap center density. The current changes significantly with the trap center density only when the latter is greater than 10²⁰/m². The threshold voltage does not change appreciably with the modulation frequency as in a silicon OPFET. However, the increased in the trap center density causes V_T to increase in the enhancement device and decrease in the depletion device. Further, V_T increases under the normally ON condition and decreases under the normally OFF condition with an increase in the photon absorption coefficient in GaAs. Some anomalous behavior is observed for higher values of the absorption coefficient

Keywords

III-V semiconductors; electron-hole recombination; field effect transistors; gallium arsenide; ion implantation; light absorption; phototransistors; GaAs; GaAs OPFET; depletion device; drain-source current; enhancement device; frequency-dependent characteristics; ion implantation; modulation frequency; normally OFF condition; normally ON condition; photon absorption coefficient; surface recombination; trap center density; Absorption; Electron traps; Frequency modulation; Gallium arsenide; High speed optical techniques; MESFETs; Optical control; Optical modulation; Silicon; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.52427

Filename

52427