Title :
High-Performance Poly-Si Thin-Film Transistors With L-Fin Channels
Author :
Lu, Yi-Hsien ; Kuo, Po-Yi ; Lin, Je-Wei ; Wu, Yi-Hong ; Chen, Yi-Hsuan ; Chao, Tien-Sheng
Author_Institution :
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
For the first time, we construct poly-Si thin-film transistors (TFTs) with novel L-shaped poly-Si fin channels (poly-Si TFTs with L-fin channels, called LFin-TFTs). The L-fin channels of LFin-TFTs are similar to the multiple-gated fin channels of FinFETs. The LFin-TFTs exhibit a low supply gate voltage (3 V), a good subthreshold swing (SS) ~ 190 mV/dec, and a high on/off current ratio (ION/IOFF)>; 106 (VD=1 V) without hydrogen-related plasma treatments. After Ni salicidation, the devices exhibit steep SS ~ 148 mV/dec and ION/IOFF ~ 107. After NH3 plasma treatment, the characteristics of the devices are further improved. The LFin-TFTs have steeper SS ~ 132 mV/dec, higher (ION/IOFF)>; 107, and threshold voltage (VTH) ~ 0.036 V.
Keywords :
MOSFET; elemental semiconductors; plasma materials processing; semiconductor thin films; silicon; surface treatment; thin film transistors; FinFET; L-fin channels; L-shaped fin channels; NH3 plasma treatment; Ni salicidation; Si; gate voltage; high-performance polySi thin-film transistor; on-off current ratio; silicon LFin-TFT; subthreshold swing; threshold voltage; voltage 1 V; voltage 3 V; FinFETs; Logic gates; Plasmas; Random access memory; Thin film transistors; Very large scale integration; $hbox{NH}_{3}$ plasma; FinFETs; L-fin; Ni salicidation; multiple gate; poly-Si thin-film transistors (TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2175357
