Micro-inhomogeneity effects and radiation damage in semi-insulating GaAs radiation detectors

Author

Bates, R. ; Didziulis, R. ; Kazukauskas, V. ; Shea, V.O. ; Raine, C. ; Rinkevioius, V. ; Smith, K.M. ; Storasta, J. ; Vaitkus, J.

Author_Institution

Dept. of Phys. & Astron., Glasgow Univ., UK

Volume

45

Issue

3

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

591

Lastpage

596

Abstract

Thermally-stimulated current (TSC) measurements and a detailed analysis of current-voltage (I-V) characteristics have been made on semi-insulating GaAs (SI-GaAs) Schottky diode particle detectors, fabricated on substrates from several suppliers, before and after irradiation with 24 GeV protons and 300 MeV pions. The analysis of I-V characteristics allows the determination of the barrier height and bulk resistance in detectors. Changes observed in I-V characteristics and TSC spectra after irradiation are described and a dislocation-net model of radiation-damaged devices is proposed

Keywords

Schottky diodes; dislocations; gallium arsenide; meson effects; proton effects; semiconductor counters; thermally stimulated currents; 24 GeV; 300 MeV; GaAs; I-V characteristics; Schottky diode; barrier height; bulk resistance; current-voltage characteristics; dislocation-net model; micro-inhomogeneity; pion irradiation; proton irradiation; radiation-damage; semi-insulating GaAs detectors; thermally-stimulated current; Electrical resistance measurement; Extraterrestrial measurements; Gallium arsenide; Laser excitation; Physics; Protons; Radiation detectors; Schottky diodes; Temperature; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.682454

Filename

682454