A comparative study of heavily irradiated silicon and non irradiated SI LEC GaAs detectors

Author

Biggeri, U. ; Borchi, E. ; Bruzzi, M. ; Eremin, V. ; Leroy, C. ; Li, Z. ; Menichelli, D. ; Pirollo, S. ; Sciortino, S. ; Verbitskaya, E.

Author_Institution

Dept. di Energetica, INFN. Firenze, Italy

Volume

45

Issue

3

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

597

Lastpage

601

Abstract

Silicon p⁺n junctions irradiated with neutron and proton fluences in the range 5×10¹¹-4×10¹⁵ cm^-2 and non-irradiated SI LEC GaAs Schottky barriers have been analyzed. In silicon the concentration N_t of the main radiation-induced deep traps (E_t≈0.44-0.54 eV) is found to increase as N_t α f achieving values up to 5×10¹⁵ cm^-3 and a mobility saturation at 100 cm²/Vs has been observed at the highest fluences. A quantitative comparison between heavily irradiated silicon and non-irradiated GaAs evidenced similar charge collection efficiencies, a quasi-intrinsic bulk, and similar concentrations of deep defects. On this basis, a unique model, correlating the lattice disorder and the detector performance, is suggested

Keywords

Schottky barriers; deep levels; gallium arsenide; neutron detection; p-n junctions; proton detection; semiconductor counters; silicon radiation detectors; GaAs; GaAs LEC detectors; Schottky barriers; Si; charge collection efficiencies; detector performance; heavily irradiated Si detector; lattice disorder; mobility saturation; neutron fluences; p⁺n junctions; proton fluences; radiation-induced deep traps; Current measurement; Detectors; Gallium arsenide; Lattices; Neutrons; Performance analysis; Protons; Schottky barriers; Silicon; Transient analysis;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.682455

Filename

682455