Radiation damage analysis of neutron irradiated double sided wedge microstrip silicon detector

Author

Borchi, E. ; Bruzzi, M. ; Catacchini, E. ; Alessandro, R.D. ; Parrini, G.

Author_Institution

Ist. Nazionale di Fisica Nucl., Firenze, Italy

Volume

45

Issue

3

fYear

1998

fDate

6/1/1998 12:00:00 AM

Firstpage

632

Lastpage

635

Abstract

A double sided wedge microstrip silicon detector and a few simple pad p⁺n junctions, from the same silicon wafer, have been characterized and studied after 1 MeV neutron irradiation. The devices have been irradiated simultaneously at room temperature up to a fluence of 7.9 10¹³ cm². A heating cycle has been performed after irradiation on the pad devices. Thermally Stimulated Currents measurements have been performed after. Each annealing step to study the radiation induced lattice disorder. Five deep traps with energy levels from 0.27 eV to 0.44 eV have been observed with trap concentrations in the range of 10¹² to 10¹⁴ cm^-3. The evolution of the lattice disorder as a function of the annealing time has been correlated with the changes in the electrical characteristics of the wedge detector

Keywords

annealing; deep levels; elemental semiconductors; neutron effects; silicon; silicon radiation detectors; thermally stimulated currents; 1 MeV; Si; annealing time; deep traps; lattice disorder; neutron irradiated double sided wedge microstrip silicon detector; neutron irradiation; pad devices; radiation damage analysis; radiation induced lattice disorder; thermally stimulated currents measurements; wedge detector; Annealing; Current measurement; Detectors; Heating; Lattices; Microstrip; Neutrons; Performance evaluation; Silicon; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.682462

Filename

682462