Shallow level analysis in irradiated silicon

Author

Borchi, E. ; Bruzzi, M. ; Li, Z. ; Pirollo, S.

Author_Institution

Dipt. di Energetica, Firenze, Italy

Volume

47

Issue

4

fYear

2000

fDate

8/1/2000 12:00:00 AM

Firstpage

1474

Lastpage

1477

Abstract

Silicon p⁺/n/n⁺ junctions with nominal starting resistivity of 4-6 kΩcm have been irradiated with a 1 MeV neutron-equivalent fluence up to 4·10¹⁴ cm^-2. In order to investigate the changes in the shallow level concentrations induced by irradiation, low temperature Thermally Stimulated Current measurements have been performed. For fluences over 10¹³ cm^-2 a phosphorous removal is observed, probably due to the formation of the vacancy-phosphorous complex

Keywords

defect states; elemental semiconductors; impurity states; impurity-vacancy interactions; interface states; neutron effects; p-n junctions; phosphorus; silicon; thermally stimulated currents; 1 MeV; 4 to 6 kohmcm; Si:P; irradiated silicon; low temperature thermally stimulated current measurements; neutron-equivalent fluence; phosphorus removal; resistivity; shallow level analysis; shallow level concentrations; silicon p⁺/n/n⁺ junctions; vacancy-phosphorus complex; Boron; Conductivity; Current measurement; Lattices; Performance evaluation; Silicon; Space charge; Temperature distribution; Temperature sensors; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.872999

Filename

872999