Title :
Heavy ion response of amorphous silicon transmission detectors for particle identification
Author :
Amman, M. ; Beaulieu, L. ; Hong, W.S. ; Phair, L. ; Walton, J.T. ; Wozniak, G.J.
Author_Institution :
Lawrence Berkeley Nat. Lab., CA, USA
fDate :
6/1/1998 12:00:00 AM
Abstract :
In an effort to determine the applicability of a-Si:H transmission detectors to integrated ΔE-E detector telescopes, we have measured the response of discrete a-Si:H detectors to ions with atomic numbers between 7 and 36 and ranging in energy from 0.5 to 4.5 MeV/nucleon. Measured pulse height spectra show substantial pulse height deficits which depend on detector bias. Additionally an unexpected result is obtained in that the amplitudes of the detector signals correlate better with the total ion energy than with the ion energy loss in the transmission detector
Keywords :
amorphous semiconductors; elemental semiconductors; silicon radiation detectors; Si:H; a-Si:H transmission detectors; amorphous silicon transmission detectors; heavy ion response; ion energy loss; particle identification; pulse height deficits; pulse height spectra; total ion energy; Amorphous silicon; Atomic measurements; Detectors; Energy loss; Energy measurement; Fabrication; Loss measurement; Particle measurements; Pulse measurements; Telescopes;
Journal_Title :
Nuclear Science, IEEE Transactions on