Development of highly reliable Al-Si-Pd alloy interconnections for VLSI

Author

Koubuchi, Yasushi ; Onuki, Jin ; Fukada, Sinichi ; Suwa, Motoo

Author_Institution

Hitachi Ltd., Hitachi, Ibaraki, Japan

Volume

37

Issue

4

fYear

1990

fDate

4/1/1990 12:00:00 AM

Firstpage

947

Lastpage

951

Abstract

An Al-Si-Pd alloy developed to improve the reliability of VLSI interconnections is discussed. Dry etching characteristics of the Al-Si-Pd alloy in submicrometer patterning proved to be much better than those of the Al-Si-Cu alloy used previously. Both electro- and stress-induced migration resistances of the Al-Si-Pd alloy were at least at the same level as those of the Al-Si-Cu alloy. Long-term reliability tests of resin-molded 1.3-μm-process MOS devices using an Al-Si-Pd alloy interconnection gave satisfactory results

Keywords

MOS integrated circuits; VLSI; aluminium alloys; electromigration; integrated circuit technology; metallisation; palladium alloys; reliability; silicon alloys; sputter etching; 1.3 micron; AlSiPd interconnections; VLSI; dry etching; electromigration resistance; long term reliability tests; reliability; resin moulded MOS devices; stress-induced migration resistances; submicrometer patterning; Aluminum alloys; Conductors; Copper alloys; Corrosion; Dry etching; MOS devices; Plasma temperature; Semiconductor films; Testing; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.52428

Filename

52428