Title :
Bistability in inhomogeneously pumped quantum well laser diodes
Author :
Kucharska, A.I. ; Blood, P. ; Fletcher, E.D. ; Hulyer, P.J.
Author_Institution :
Philips Res. Lab., Redhill, UK
fDate :
2/1/1988 12:00:00 AM
Abstract :
Hysteresis has been observed in the light-current characteristics of inhomogeneously pumped GaAs/AlGaAs laser diodes with both MQW and bulk GaAs active layers. Bistable action was observed in both types of device, at switching speeds suggesting that electronic mechanisms were responsible for saturation of the absorption in the passive region of each structure. In the MQW case, the wavelength of operation of the device suggested saturation of the excitonic absorption
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical bistability; optical information processing; optical pumping; semiconductor junction lasers; GaAs-AlGaAs; MQW active layers; bulk GaAs active layers; excitonic absorption saturation; inhomogeneously pumped quantum well laser diodes; light-current characteristics; semiconductor;
Journal_Title :
Optoelectronics, IEE Proceedings J
