Title :
A look at the phenomenon of charge multiplication in silicon radiation detector within the concept of dynamic focusing of the electric field
Author :
Tsyganov, Yu. ; Kushniruk, W. ; Polyakov, A.
Author_Institution :
Lab. of Nucl. Reactions, JINR, Dubna, Russia
fDate :
10/1/1996 12:00:00 AM
Abstract :
The spectra of 34S and 40Ar ions measured with silicon detectors were analyzed within the concept of dynamic focusing of the electric field. The ionization constant b was obtained for different fields. An estimation of the hot electrons temperature was carried out. A reasonable scenario for the development of charge multiplication process is suggested, taking into account the influence of initial electron-hole concentration on the formation of the hot carriers subsystem
Keywords :
electric field effects; focusing; hot carriers; silicon radiation detectors; 34S spectra; 40Ar spectra; Ar; S; Si; Si radiation detector; charge multiplication; dynamic focusing; electric field; hot carriers subsystem formation; hot electrons temperature; initial electron-hole concentration; ionization constant; Charge carriers; Charge measurement; Current measurement; Electrodes; Electrons; Particle tracking; Plasma density; Plasma measurements; Silicon radiation detectors; Space charge;
Journal_Title :
Nuclear Science, IEEE Transactions on
