Title :
Low threshold 1.3 μm InAsP n-type modulation doped MQW lasers grown by gas-source molecular-beam epitaxy
Author :
Shimizu, H. ; Kumada, K. ; Yamanaka, N. ; Iwai, N. ; Mukaihara, T. ; Kasukawa, A.
Author_Institution :
R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
fDate :
4/30/1998 12:00:00 AM
Abstract :
The authors have investigated, for the first time, the effect of n-type modulation doping, as well as growth temperature, on the threshold current density of 1.3 μm InAsP strained MQW lasers grown by gas-source MBE and have obtained threshold current densities as low as 250 A/cm2 for 1200 μm long devices
Keywords :
III-V semiconductors; chemical beam epitaxial growth; current density; doping profiles; indium compounds; laser transitions; quantum well lasers; 1.3 micron; 1200 micron; GSMBE; InAsP; InAsP strained MQW lasers; gas-source MBE; growth temperature; low threshold lasers; molecular-beam epitaxy; n-type modulation doping; semiconductor lasers; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980662
