Title :
Low threshold current 1.3 μm InAsP QW ACIS lasers
Author :
Iwai, N. ; Mukaihara, T. ; Shimizu, H. ; Yamanaka, N. ; Kumada, K. ; Kasukawa, A.
Author_Institution :
R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
fDate :
4/30/1998 12:00:00 AM
Abstract :
A very low threshold current of 3.0 mA and a stable transverse mode operation of >30 mW were achieved in 1.3 μm InAsP strained-layer quantum well Al-oxide confined inner stripe (ACIS) lasers. Strain-compensated AlAs-InP-AlInAs superlattice layers, grown on InP substrate using gas source-MBE, are used for oxidation
Keywords :
III-V semiconductors; chemical beam epitaxial growth; indium compounds; laser modes; laser stability; laser transitions; oxidation; quantum well lasers; 1.3 micron; 3 mA; 30 mW; Al-oxide confined inner stripe; AlAs-InP-AlInAs; AlAs-InP-AlInAs superlattice layers; AlO; GSMBE; InAsP; InAsP QW ACIS lasers; InP; InP substrate; gas source-MBE; low threshold current; oxidation; semiconductor lasers; stable transverse mode operation; strain-compensated superlattice layers; strained-layer quantum well;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980627
