DocumentCode
1391307
Title
Low threshold current 1.3 μm InAsP QW ACIS lasers
Author
Iwai, N. ; Mukaihara, T. ; Shimizu, H. ; Yamanaka, N. ; Kumada, K. ; Kasukawa, A.
Author_Institution
R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
Volume
34
Issue
9
fYear
1998
fDate
4/30/1998 12:00:00 AM
Firstpage
890
Lastpage
891
Abstract
A very low threshold current of 3.0 mA and a stable transverse mode operation of >30 mW were achieved in 1.3 μm InAsP strained-layer quantum well Al-oxide confined inner stripe (ACIS) lasers. Strain-compensated AlAs-InP-AlInAs superlattice layers, grown on InP substrate using gas source-MBE, are used for oxidation
Keywords
III-V semiconductors; chemical beam epitaxial growth; indium compounds; laser modes; laser stability; laser transitions; oxidation; quantum well lasers; 1.3 micron; 3 mA; 30 mW; Al-oxide confined inner stripe; AlAs-InP-AlInAs; AlAs-InP-AlInAs superlattice layers; AlO; GSMBE; InAsP; InAsP QW ACIS lasers; InP; InP substrate; gas source-MBE; low threshold current; oxidation; semiconductor lasers; stable transverse mode operation; strain-compensated superlattice layers; strained-layer quantum well;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980627
Filename
682834
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