• DocumentCode
    1391313
  • Title

    Planar homoepitaxial laser diodes grown on aluminium-doped ZnSe substrates

  • Author

    Wenisch, H. ; Ohkawa, K. ; Isemann, A. ; Fehrer, M. ; Hommel, D.

  • Author_Institution
    Inst. fur Festkorperphys., Bremen Univ., Germany
  • Volume
    34
  • Issue
    9
  • fYear
    1998
  • fDate
    4/30/1998 12:00:00 AM
  • Firstpage
    891
  • Lastpage
    893
  • Abstract
    Stable room temperature operation of planar green laser diodes at 512 nm was achieved on ZnSe substrates, which are conductive in the first 200 μm from the top due to post-growth aluminium doping. The threshold current density is 900-1000 A/cm2 and the operating voltage is ~14 V. The lifetime in pulsed operation exceeds 1 h
  • Keywords
    II-VI semiconductors; aluminium; cadmium compounds; current density; laser stability; laser transitions; quantum well lasers; substrates; zinc compounds; 1 hour; 14 V; Al-doped ZnSe substrates; CdZnSe-ZnSe; ZnSe based LDs; ZnSe:Al; green laser diodes; planar homoepitaxial laser diodes; post-growth aluminium doping; pulsed operation lifetime; stable room temperature operation; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980669
  • Filename
    682835
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1391313