• DocumentCode
    1391316
  • Title

    Reset Current Scaling in Phase-Change Memory Cells: Modeling and Experiments

  • Author

    Bergonzoni, Carlo ; Borghi, Massimo ; Palumbo, Elisabetta

  • Author_Institution
    STMicroelectron., Agrate Brianza, Italy
  • Volume
    59
  • Issue
    2
  • fYear
    2012
  • Firstpage
    283
  • Lastpage
    291
  • Abstract
    The operation of a phase-change memory cell is studied, with special regard to programming performance, by means of analytical and TCAD numerical modeling and experimental characterization. Dependence of the reset current on geometrical properties of the heater element is analyzed through the study of heat flux from the heater element to the phase-change material. A simple electrothermal analytical model is implemented, which allows the prediction of the cell reset current value as a function of heater geometrical parameters. Analytical predictions are compared with good agreement to extensive experimental measurements. The effects of power dissipation are studied, showing that cell power efficiency strongly depends on its geometrical properties.
  • Keywords
    phase change materials; phase change memories; technology CAD (electronics); TCAD; geometrical properties; heat flux; heater element; phase change material; phase change memory cells; programming performance; reset current scaling; Computer architecture; Geometry; Heat sinks; Materials; Mathematical model; Resistance heating; Device scaling; modeling; nonvolatile memory devices; phase-change memory (PCM);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2011.2175736
  • Filename
    6096394