DocumentCode
1391316
Title
Reset Current Scaling in Phase-Change Memory Cells: Modeling and Experiments
Author
Bergonzoni, Carlo ; Borghi, Massimo ; Palumbo, Elisabetta
Author_Institution
STMicroelectron., Agrate Brianza, Italy
Volume
59
Issue
2
fYear
2012
Firstpage
283
Lastpage
291
Abstract
The operation of a phase-change memory cell is studied, with special regard to programming performance, by means of analytical and TCAD numerical modeling and experimental characterization. Dependence of the reset current on geometrical properties of the heater element is analyzed through the study of heat flux from the heater element to the phase-change material. A simple electrothermal analytical model is implemented, which allows the prediction of the cell reset current value as a function of heater geometrical parameters. Analytical predictions are compared with good agreement to extensive experimental measurements. The effects of power dissipation are studied, showing that cell power efficiency strongly depends on its geometrical properties.
Keywords
phase change materials; phase change memories; technology CAD (electronics); TCAD; geometrical properties; heat flux; heater element; phase change material; phase change memory cells; programming performance; reset current scaling; Computer architecture; Geometry; Heat sinks; Materials; Mathematical model; Resistance heating; Device scaling; modeling; nonvolatile memory devices; phase-change memory (PCM);
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2011.2175736
Filename
6096394
Link To Document