DocumentCode
1391320
Title
Efficient Simulation and Analysis of Quantum Ballistic Transport in Nanodevices With AWE
Author
Huang, Jun Z. ; Chew, Weng Cho ; Tang, Min ; Jiang, Lijun
Author_Institution
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Volume
59
Issue
2
fYear
2012
Firstpage
468
Lastpage
476
Abstract
Quantum-mechanical modeling of ballistic transport in nanodevices usually requires solving the Schrödinger equation at multiple energy points within an energy band. To speed up the simulation and analysis, the asymptotic waveform evaluation is introduced in this paper. Using this method, the wave function is only rigorously solved at several sampled energy points, whereas those at other energies are computed through Padé approximation. This allows us to obtain the physical quantities over the whole energy band with very little computational cost. In addition, the accuracy is controllable by a complex frequency hopping algorithm. The validity and efficiency of the proposed method are demonstrated by detailed study of several multigate silicon nano-MOSFETs.
Keywords
MOSFET; Schrodinger equation; silicon; AWE; Pade approximation; Schrodinger equation; asymptotic waveform evaluation; energy band; multigate silicon nanoMOSFET; nanodevices; quantum ballistic transport analysis; quantum-mechanical modeling; Boundary conditions; Effective mass; Equations; Mathematical model; Nanoscale devices; Silicon; Wave functions; Asymptotic waveform evaluation (AWE); Schrödinger equation; complex frequency hopping (CFH); local density of states (LDOS); multigate MOSFET; nanodevices; quantum transport;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2011.2176130
Filename
6096395
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