Title :
Self-organised InGaAs quantum wire lasers on GaAs multi-atomic steps
Author :
Hara, S. ; Motohisa, J. ; Fukui, T.
Author_Institution :
Res. Center for Interface Quantum Electron., Hokkaido Univ., Sapporo, Japan
fDate :
4/30/1998 12:00:00 AM
Abstract :
The authors report the first successful demonstration of self-organised InGaAs quantum wire (QWR) laser diodes (LDs) utilising GaAs multi-atomic steps at 77 K by pulsed current injections. The lasing wavelength of InGaAs QWR-LDs is consistent with the peak position of photoluminescence spectra at 77 K. When a cavity direction is perpendicular to the QWR´s array direction, the threshold current density of InGaAs QWR LDs is smaller than that of quantum well LDs
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; quantum well lasers; semiconductor laser arrays; semiconductor quantum wires; 77 K; GaAs; GaAs multi-atomic step; InGaAs; QWR LD array; cavity; photoluminescence spectra; pulsed current injection; self-organised InGaAs quantum wire laser; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980673
