DocumentCode
1391406
Title
1 Tbit/s demultiplexing using low temperature grown InGaAs/InAlAs multiple quantum wells
Author
Kobayashi, H. ; Takahashi, Ryo ; Matsuoka, Y. ; Iwamura, H.
Author_Institution
NTT Opto-Electron. Labs., Kanagawa, Japan
Volume
34
Issue
9
fYear
1998
fDate
4/30/1998 12:00:00 AM
Firstpage
908
Lastpage
910
Abstract
We have fabricated optical switching/sampling modules using a surface reflection all-optical AND gate switch, called LOTOS, operating in the 1.55μm band. The module achieved a response time of 390fs with a contrast ratio of 25 in a fibre-based experiment. Using the modules, we performed all-optical demultiplexing for signal pulses corresponding to 1.05Tbit/s and clearly detected the demultiplexed optical pulses
Keywords
III-V semiconductors; aluminium compounds; demultiplexing equipment; gallium arsenide; indium compounds; optical communication equipment; optical fibres; optical switches; semiconductor quantum wells; 1.05 Tbit/s; 1.55 micrometre; 390 fs; III-V semiconductors; InGaAs-InAlAs; LOTOS; contrast ratio; demultiplexing; fibre-based experiment; low temperature growth; multiple quantum wells; optical switching/sampling modules; response time; signal pulses; surface reflection all-optical AND gate switch;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980584
Filename
682853
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