Title :
1 Tbit/s demultiplexing using low temperature grown InGaAs/InAlAs multiple quantum wells
Author :
Kobayashi, H. ; Takahashi, Ryo ; Matsuoka, Y. ; Iwamura, H.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
4/30/1998 12:00:00 AM
Abstract :
We have fabricated optical switching/sampling modules using a surface reflection all-optical AND gate switch, called LOTOS, operating in the 1.55μm band. The module achieved a response time of 390fs with a contrast ratio of 25 in a fibre-based experiment. Using the modules, we performed all-optical demultiplexing for signal pulses corresponding to 1.05Tbit/s and clearly detected the demultiplexed optical pulses
Keywords :
III-V semiconductors; aluminium compounds; demultiplexing equipment; gallium arsenide; indium compounds; optical communication equipment; optical fibres; optical switches; semiconductor quantum wells; 1.05 Tbit/s; 1.55 micrometre; 390 fs; III-V semiconductors; InGaAs-InAlAs; LOTOS; contrast ratio; demultiplexing; fibre-based experiment; low temperature growth; multiple quantum wells; optical switching/sampling modules; response time; signal pulses; surface reflection all-optical AND gate switch;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980584
