Numerical analysis of electrical characteristics of polysilicon thin film transistors fabricated by excimer laser crystallisation

Author

Mariucci, L. ; Giacometti, F. ; Pecora, A. ; Massussi, F. ; Fortunato, G. ; Valdinoci, M. ; Colalongo, L.

Author_Institution

Istituto di Elettronica dello Stato Solido, CNR, Rome, Italy

Volume

34

Issue

9

fYear

1998

fDate

4/30/1998 12:00:00 AM

Firstpage

924

Lastpage

926

Abstract

The authors have performed a 2D numerical analysis of the electrical characteristics of polysilicon thin-film transistors (TFTs), made by excimer laser crystallisation (ELC), with high field-effect mobility (>300 cm²/Vs) and low threshold voltage (<1.5 V). In spite of the highly non-uniform defect distribution in ELC-polysilicon (mainly localised at the grain boundaries), the authors show that the device characteristics can be adequately described by using, in the numerical analysis, an effective density of states uniformly distributed within the semiconductor. This model, already verified in solid phase crystallised polysilicon TFTs, allows the analysis of ELC-polysilicon devices to be simplified

Keywords

crystallisation; elemental semiconductors; laser materials processing; semiconductor device models; silicon; thin film transistors; 1.5 V; 2D numerical analysis; Si; defect distribution; density of states; electrical characteristics; excimer laser crystallisation; field effect mobility; grain boundary; model; polysilicon thin film transistor; semiconductor; threshold voltage;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19980619

Filename

682864