Operation of InGaAs quasi-quantum-wire FET fabricated by selective growth using molecular beam epitaxy

A field effect transistor (FET) using single InGaAs quasi-quantum-wire (quasi-QWR) as a channel has been fabricated. The quasi-QWR structures were fabricated by selective growth using molecular beam epitaxy on non-planar InP substrate. The width and thickness of the quasi-QWR are 200 nm and 7 nm, respectively. The FET demonstrated good saturation characteristics and its maximum transconductance (gm) was 105 mS/mm at a drain voltage of 0.6 V