DocumentCode
1391482
Title
Surface flashover effects in AlGaN/GaN HFETs
Author
Sudarshan, T.S. ; Gradinaru, G. ; Yang, J. ; Khan, M.A.
Author_Institution
Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA
Volume
34
Issue
9
fYear
1998
fDate
4/30/1998 12:00:00 AM
Firstpage
927
Lastpage
928
Abstract
Experimental evidence of surface flashover in AlGaN/GaN heterojunction field effect transistors is presented. A practical and unambiguous way of identifying device failure by flashover is proposed. Surface flashover is the main mechanism initiating premature breakdown in these devices leading to a significant reduction of their power capability
Keywords
III-V semiconductors; aluminium compounds; flashover; gallium compounds; junction gate field effect transistors; AlGaN-GaN; AlGaN/GaN HFET; breakdown; device failure; heterojunction field effect transistor; surface flashover;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980648
Filename
682868
Link To Document