DocumentCode
1391541
Title
Dual bridge 6 Gsample/s track and hold circuit in AlGaAs/GaAs/AlGaAs HEMT technology
Author
Bushehri, E. ; Thiede, A. ; Staroselsky, V. ; Timochenkov, V. ; Lienhart, H. ; Bratov, V. ; Jakobus, T.
Author_Institution
Microelectron. Centre, Middlesex Polytech., London, UK
Volume
34
Issue
10
fYear
1998
fDate
5/14/1998 12:00:00 AM
Firstpage
934
Lastpage
936
Abstract
A T&H circuit with a sampling rate of 6 Gsample/s has been experimentally demonstrated in AlGaAs/GaAs/AlGaAs HEMT technology. The circuit utilises a dual bridge topology suitable for interleaved ADC circuits, doubling the effective sampling rate with an insignificant increase in area compared to the previously reported solutions
Keywords
HEMT integrated circuits; III-V semiconductors; aluminium compounds; analogue-digital conversion; bridge circuits; field effect analogue integrated circuits; gallium arsenide; sample and hold circuits; signal sampling; AlGaAs-GaAs-AlGaAs; HEMT technology; T&H circuit; dual bridge topology; interleaved ADC circuits; sampling rate; track/hold circuit;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980692
Filename
682900
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