Title :
An 1800 V 300 A nondestructive tester for bipolar power transistors
Author :
Carpenter, Grant ; Lee, Fred C Y ; Chen, Dan Y.
Author_Institution :
Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fDate :
7/1/1990 12:00:00 AM
Abstract :
A nondestructive reverse-bias safe operating area (RBSOA) tester using an ultra-fast shunt circuit is constructed and demonstrated up to an 1800 V 300 A level. An innovative MOSFET shunt circuit is the key to the high power capability of the tester. The tester is an upgraded version of the old tester (rated at 1000 V 120 A) reported by the authors in 1985. The basic operation of the tester is reviewed, the design and the fabrication of the new tester are described, and test results are provided
Keywords :
bipolar transistors; nondestructive testing; power transistors; test equipment; 1800 V; 300 A; RBSOA; bipolar power transistor testing; nondestructive tester; reverse-bias safe operating area; ultra-fast shunt circuit; Breakdown voltage; Capacitors; Circuit testing; Electric breakdown; Fabrication; MOSFET circuits; Nondestructive testing; Power transistors; Shunt (electrical); Switches;
Journal_Title :
Power Electronics, IEEE Transactions on
