Diode forward and reverse recovery model for power electronic SPICE simulations

Author

Liang, Yung-Chii ; Gosbell, Victor J.

Author_Institution

Sch. of Electr. Eng., Sydney Univ., NSW, Australia

Volume

5

Issue

3

fYear

1990

fDate

7/1/1990 12:00:00 AM

Firstpage

346

Lastpage

356

Abstract

A pn-diode micro-model representing forward and reverse recovery phenomena for power electronic simulation, especially simulations using SPICE2 is presented. The model is proposed to compensate the incompleteness of the diode model in current circuit simulation packages. In the forward recovery submodel, the diode bulk resistance modulation and its forward current dependence are included. In the reverse recovery submodel, the charge control equation for excess storage carriers is employed to simulate the detailed behavior. A procedure is described for extracting the model´s physical parameters from data sheet information. The model is verified by a comparison of experimental results for several different tests with SPICE simulations. A discussion is given of extending the applicability of the micro-model to the simulation of p-i-n diode behaviour

Keywords

digital simulation; electronic engineering computing; semiconductor device models; semiconductor diodes; SPICE2; charge control equation; diode bulk resistance modulation; excess storage carriers; forward current dependence; forward recovery; pn-diode micro-model; power electronic simulation; reverse recovery; Circuit simulation; Data mining; Electronics packaging; Equations; P-i-n diodes; Power electronics; SPICE; Semiconductor diodes; Semiconductor process modeling; Voltage;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/63.56526

Filename

56526