REBULF super junction MOSFET with N+ buried layer

A reduced bulk field (REBULF) super junction metal-oxide semiconductor field-effect transistor is designed for the first time with N⁺ buried layer in the P-type high resistance substrate. The substrate-assisted depletion effect, resulting from charge imbalance between the N and P-type pillars when the super junction is implemented on the P-type substrate, is suppressed due to the charge compensation by the N⁺ buried layer. The high electric field around the drain is reduced, thanks to the REBULF effect which causes the redistribution of the electric field in the drift region; thus the breakdown voltage is improved because the substrate supports more biases. The new structure features high breakdown voltage, low specific on-resistance and charge balance in drift region.