Characterisation of copper thin film oxidation deposited by electron beam physical vapour deposition at low temperatures

In this research, copper thin films were produced by electron beam physical vapour deposition on silicon substrates. Then, the oxidation kinetics of these films was investigated at 100 and 200°C by electrochemical and oxide patterning methods. Results showed that the oxidation kinetics at these temperatures obey the logarithmic rate law. Transportation of ions in the nanostructured materials occurs in the abundant grain boundaries and defects. It causes high oxidation rate in the short times at the beginning of the oxidation. In the following, the preferred tracks have been blocked gradually with time and as a result oxidation rate decreased. Moreover, the tensile stress in the copper thin film at 100°C did not cause yielding in the copper deposit. Therefore the application of copper deposits at this temperature is allowable.