Title :
Effect of PZT annealing on structural changes in PZT/SiO2 surface and its masking behaviour to KOH/TMAH
Author :
Joshi, A.B. ; Bodas, Deva ; Gandhi, Rajeev ; Natarajan, Kamali ; Gangal, S.A.
Author_Institution :
Dept. of Electron. Sci., Univ. of Pune, Pune, India
Abstract :
This Letter reports the effect of piezoelectric (PZT) annealing on structural changes in silicon dioxide layer and for the first time its masking behaviour during PZT thin film processing. The PZT thin film is radio frequency sputtered on thermally grown silicon dioxide layer. The PZT on SiO2 film is annealed using conventional furnace annealing at 650°C, 120 min. The effect of annealing cycle on Pb and Zr diffusion in SiO2 is studied using energy dispersive X-ray analysis. The effect of potassium hydroxide (KOH) and tetra methyl ammonium hydroxide (TMAH) treatment on masking behaviour of PZT/SiO2 layer is investigated and the obtained results are presented. The structural changes in film are studied using scanning electron microscopy characterisation and the results are discussed. The process repeatability is tested with KOH and TMAH solutions.
Keywords :
X-ray chemical analysis; annealing; diffusion; lead compounds; piezoelectric materials; piezoelectric thin films; scanning electron microscopy; sputter deposition; PZT; PZT annealing; PZT-SiO2; diffusion; energy dispersive X-ray analysis; furnace annealing; masking behaviour; piezoelectric annealing; radio frequency sputter deposition; scanning electron microscopy; temperature 650 degC; thermally-grown silicon dioxide layer; thin film processing; time 120 min;
Journal_Title :
Micro & Nano Letters, IET
DOI :
10.1049/mnl.2011.0513
