DocumentCode :
1391949
Title :
Implantable hybrid chrome silicide temperature sensor for power MEMS devices
Author :
Hyunchul Park ; Yongdae Kim ; Eun Sang Jung ; Sejin Kwon
Author_Institution :
Dept. of Aerosp. Eng., KAIST, Daejeon, South Korea
Volume :
6
Issue :
11
fYear :
2011
Firstpage :
895
Lastpage :
899
Abstract :
In this Letter, an implantable hybrid temperature sensor for use in a micro-scale space in power MEMS devices is proposed. The developed sensor use chrome silicide (CrSi2), which has a very high electromotive force, and nickel as a base metal. Since a thermocouple is an appropriate device to measure temperature at a specific spot, the correlations between the junction sizes and electromotive forces should be verified to reduce the junction size of the thermocouple. Furthermore, it is necessary to verify the performance of the thermocouple implanted in a microdevice by patterning a resistance temperature detector (RTD) on the side of the cold junctions to evaluate the reference temperature of the nickel. The Seebeck coefficients of the CrSi2 thin film thermocouples occur at approximately 70 V/°C, and the values have been shown to be 1.8 times higher than those of commercial thermocouples. The value of the slope, αNi, which is the temperature coefficient of resistance (TCR) of the nickel RTD is 0.0063/°C at 20°C, whereas the reference value of the TCR of nickel, αNi-ref is 0.0067/°C at 20°C. The third-order polynomial compensation is 99.989° of the regression square value. Based on the verification, a prototype of the hybrid temperature sensor is implanted in a micro methanol°hydrogen peroxide auto-thermal reforming module by stacking six different layers that consist of temperature sensors for the base and different channel figures for the reforming reaction.
Keywords :
Seebeck effect; chromium compounds; microsensors; prototypes; temperature sensors; thermocouples; CrSi2; Seebeck coefficient; electromotive force; hybrid chrome silicide temperature sensor; implantable temperature sensor; junction size; power MEMS device; prototype; regression square value; resistance temperature detector; temperature 20 degC; temperature coefficient of resistance; thermocouple; third order polynomial compensation;
fLanguage :
English
Journal_Title :
Micro & Nano Letters, IET
Publisher :
iet
ISSN :
1750-0443
Type :
jour
DOI :
10.1049/mnl.2011.0431
Filename :
6096498
Link To Document :
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