Title :
Strong normal-incidence infrared absorption and photo-current spectra from highly uniform (In,Ga)As/GaAs quantum dot structures
Author :
Pan, D. ; Towe, E. ; Kennerly, S.
Author_Institution :
Lab. for Opt. & Quantum Electron., Virginia Univ., Charlottesville, VA, USA
fDate :
5/14/1998 12:00:00 AM
Abstract :
The authors report normal-incidence infrared absorption in the wavelength range 12-14 μm and low temperature (40 K) photocurrent spectra from an (In,Ga)As/GaAs quantum dot structure. The basic structure consists of 20 periods of highly uniform (In,Ga)As/GaAs dot arrays. The strong room temperature absorption indicates the high quality of the superlattice structure; this is considered to be very promising for the fabrication of high performance, long wavelength photodetectors
Keywords :
III-V semiconductors; arrays; gallium arsenide; indium compounds; infrared detectors; infrared spectra; photoconductivity; photodetectors; semiconductor quantum dots; (In,Ga)As/GaAs quantum dot structures; 12 to 14 micron; 293 K; 40 K; InGaAs-GaAs; long wavelength photodetectors; normal-incidence IR absorption; photocurrent spectra; room temperature absorption; superlattice structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980589
