Passively mode-locked diode-pumped surface-emitting semiconductor laser

Author

Hoogland, S. ; Dhanjal, S. ; Tropper, A.C. ; Roberts, J.S. ; Häring, R. ; Paschotta, R. ; Morier-Genoud, F. ; Keller, U.

Author_Institution

Dept. of Phys. & Astron., Southampton Univ., UK

Volume

12

Issue

9

fYear

2000

Firstpage

1135

Lastpage

1137

Abstract

A surface-emitting semiconductor laser has been passively mode locked in an external cavity incorporating a semiconductor saturable absorber mirror. The gain medium consists of a stack of 12 InGaAs-GaAs strained quantum wells, grown above a Bragg mirror structure, and pumped optically by a high-brightness diode laser. The mode-locked laser emits pulses of 22-ps full-width at half maximum duration at 1030 nm, with a repetition rate variable around 4.4 GHz.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; laser mode locking; optical pumping; optical saturable absorption; quantum well lasers; surface emitting lasers; 1030 nm; 22 ps; Bragg mirror structure; InGaAs-GaAs; InGaAs-GaAs strained quantum well laser; external cavity; full-width at half maximum duration; gain medium; high-brightness diode laser; passively mode-locked diode-pumped surface-emitting semiconductor laser; repetition rate; semiconductor saturable absorber mirror; Laser excitation; Laser mode locking; Mirrors; Optical pumping; Pump lasers; Quantum well lasers; Semiconductor diodes; Semiconductor lasers; Stimulated emission; Surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.874213

Filename

874213