Title :
Minimization of the linewidth enhancement factor in tensile-strained quantum-well lasers
Author :
Mullane, M.P. ; McInerney, J.G.
Author_Institution :
Dept. of Phys., Univ. Coll. Cork, Ireland
Abstract :
Means of minimizing the linewidth enhancement factor in tensile-strained semiconductor lasers are theoretically investigated using a detailed microscopic model including many-body effects, strain, and valence subband mixing. The effects of well width and strain are analyzed and fundamental trends in the behavior of the linewidth enhancement factor are highlighted. Qualitatively different behavior of the linewidth enhancement factor is observed in tensile-strained devices, as compared to compressive and unstrained devices. In particular, the linewidth enhancement factor in highly tensile-strained devices displays reduced sensitivity to the device threshold gain. In contrast to unstrained and compressively strained structures, such devices offer improved performance at wider well widths.
Keywords :
quantum well lasers; semiconductor device models; spectral line broadening; compressively strained structures; device threshold gain; linewidth enhancement factor; many-body effects; microscopic model; sensitivity; tensile-strained devices; tensile-strained quantum-well lasers; valence subband mixing; well strain; well width; wider well widths; Capacitive sensors; Chirp modulation; Laser feedback; Laser modes; Laser theory; Microscopy; Optical refraction; Quantum well lasers; Semiconductor lasers; Tensile strain;
Journal_Title :
Photonics Technology Letters, IEEE
