Title :
Fabrication of ultrafast Si based MSM photodetector
Author :
Löken, M. ; Kappius, L. ; Manti, S. ; Buchal, Ch.
Author_Institution :
Inst. fur Schicht- und Ionentechnik, Forschungszentrum Julich GmbH, Germany
fDate :
5/14/1998 12:00:00 AM
Abstract :
The authors report on ultrafast metal-semiconductor-metal (MSM) photodetectors. The devices are manufactured on an epitaxial CoSi2 ground plate on silicon, and uses single crystalline silicon as the photosensitive layer. The MSM photodiodes show an impulse response of up to 3.5 ps FWHM on (111) Si and 6.7 ps FWHM on (100) Si. An external quantum efficiency of 4.6% was measured
Keywords :
chromium; cobalt compounds; elemental semiconductors; metal-semiconductor-metal structures; photodetectors; photodiodes; silicon; (111) Si substrate; 4.6 percent; Cr-Si-CoSi2; Si; Si based MSM photodetector; epitaxial CoSi2 ground plate; single crystalline Si photosensitive layer; ultrafast photodetector;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980661
