DocumentCode
1392015
Title
Effect of N2-annealing on n-type Si metal-oxide-semiconductor capacitors by using liquid-phase deposition SiO2
Author
Gwo-Huei Yang ; Wen-Tse Chang ; Jun-Dar Hwang ; Jun-Hung Lin ; Yu-Hung Chen
Author_Institution
Dept. of Electron. Eng., Chung Chou Univ. of Sci. & Technol., Yuanlin, Taiwan
Volume
6
Issue
11
fYear
2011
Firstpage
944
Lastpage
946
Abstract
Low-temperature silicon-oxide films were grown on n-type Si surfaces using the liquid-phase deposition (LPD) method. Various temperature annealing was employed to improve the electrical properties of LPD-oxide. Metal-oxide-semiconductor (MOS) capacitors were fabricated to characterise the annealing effects on the n-type Si/LPD-oxide interface using current-voltage and capacitance-voltage measurements. Observations showed that the MOS capacitor with as-grown LPD-oxide has a large leakage current density of 2.1-10-5 A/cm2 and fixed oxide charge density of 2.8×1012 cm-2. After 500°C annealing in N2 environment for 30 min, the leakage current density and fixed oxide charge density are drastically reduced to 3.2 10-8 A/cm2 and 1.2×1012 cm-2, respectively.
Keywords
MOS capacitors; annealing; capacitance measurement; elemental semiconductors; leakage currents; liquid phase deposition; silicon; silicon compounds; thin films; Si-SiO2; annealing; capacitance-voltage measurement; current-voltage measurement; electrical properties; leakage current density; liquid-phase deposition; low-temperature silicon-oxide films; n-type silicon metal-oxide-semiconductor capacitors; temperature 500 degC; time 30 min;
fLanguage
English
Journal_Title
Micro & Nano Letters, IET
Publisher
iet
ISSN
1750-0443
Type
jour
DOI
10.1049/mnl.2011.0472
Filename
6096509
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