DocumentCode :
1392022
Title :
Investigation of an optoelectronic nonlinear effect in a GaInAs photodiode, and its application of a coherent optical communication system
Author :
Humphreys, D.A. ; Lobbett, R.A.
Author_Institution :
NPL, Teddington, UK
Volume :
135
Issue :
1
fYear :
1988
fDate :
2/1/1988 12:00:00 AM
Firstpage :
45
Lastpage :
51
Abstract :
A nonlinear mixing effect has been predicted theoretically, and measured using a GaInAs PIN photodiode. The nonlinear effect has been simulated using a small signal finite difference model. The variation of the effect has been measured over the frequency range 1.2-15 GHz for a number of bias voltages from 5 to 20 V, and th effect has been shown to be optoelectronic in origin. A high frequency heterodyne experiment has been performed with the optical and local oscillator signals in the range 10-20 GHz. The difference beat frequency was observed at 500 MHz and 2 GHz. The measured conversion loss was between 27 and 40 dB for a 0 dBm local oscillator signal. The application of the optoelectronic mixing effect to optical fibre frequency domain multiplex systems for the dissemination of frequency standards has been considered
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; multiplexing; nonlinear optics; optical communication equipment; photodiodes; 1.2 to 20 GHz; 27 to 40 dB; 5 to 20 V; GaInAs photodiode; PIN photodiode; coherent optical communication system; conversion loss; frequency standards; nonlinear mixing effect; optical fibre frequency domain multiplex systems; optoelectronic mixing effect; optoelectronic nonlinear effect; semiconductor; small signal finite difference model;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings J
Publisher :
iet
ISSN :
0267-3932
Type :
jour
Filename :
6830
Link To Document :
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