A 310 K pixel bipolar imager (BASIS)

Author

Tanaka, Nobuyoshi ; Hashimoto, Shuji ; Shinohara, Mahito ; Sugawa, Shigetoshi ; Morishita, Masakazu ; Matsumoto, Shigeyuki ; Nakamura, Yoshio ; Ohmi, Tadahiro

Author_Institution

Canon Inc., Kanagawa, Japan

Volume

37

Issue

4

fYear

1990

fDate

4/1/1990 12:00:00 AM

Firstpage

964

Lastpage

971

Abstract

The BASIS (base-stored image sensor) bipolar imaging device, which consists of a bipolar phototransistor in a capacitor-loaded emitter-follower circuit, is discussed. The device is used in an imager with 310 K pixels (640 H×490 V) in a 2/3-in optical format. The imager exhibits excellent performance characteristics, such as a high aperture ratio of 60%, an image lag less than 0.1%, and good linearity with a dynamic range of 76 dB. The read out and reset operation, antiblooming capability, and total system circuit and FPN cancellation are discussed

Keywords

bipolar integrated circuits; image sensors; phototransistors; 310000 pixel; 490 pixel; 640 pixel; BASIS; FPN cancellation; antiblooming capability; aperture ratio; base-stored image sensor; bipolar imaging device; bipolar phototransistor; capacitor-loaded emitter-follower circuit; dynamic range; image lag; linearity; read out operation; reset operation; Apertures; Circuits; Image sensors; Linearity; Optical devices; Optical imaging; Optical sensors; Phototransistors; Pixel; Stimulated emission;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.52431

Filename

52431