Title :
CMOS-based photoreceiver arrays for page-oriented optical storage access
Author :
Tang, J. ; Seshadri, B. ; Naughton, K.N. ; Lee, B.K. ; Chi, R.C.J. ; Steckl, A.J. ; Beyette, F.R., Jr.
Author_Institution :
Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA
Abstract :
We report on the design, characterization, and page-oriented read demonstration of a 5×5 photoreceiver array fabricated within the technology constraints of a standard 1.2-μm CMOS fabrication process. These monolithic circuits include a silicon-based photodetector, a multistage current amplifier, and a thresholding circuit that allows the photoreceiver sensitivity to be tuned over a wide range of optical power levels. In addition to characterizing the performance of individual photoreceiver circuits, we demonstrate the ability to interface directly with very large scale integration logic circuits. Finally, a 5×5 photoreceiver array is used to detect and then display a two-dimensional pattern of bits arranged in a page-oriented data format.
Keywords :
CMOS integrated circuits; VLSI; integrated logic circuits; integrated optoelectronics; optical arrays; optical receivers; optical storage; photodetectors; sensitivity; 1.2 mum; 1.2-/spl mu/m CMOS fabrication process; 2D bit pattern; 5/spl times/5 photoreceiver array; 5/spl times/5 photoreceiver array fabrication; CMOS-based photoreceiver arrays; VLSI; individual photoreceiver circuits; monolithic circuits; multistage current amplifier; optical power levels; page-oriented data format; page-oriented optical storage access; page-oriented read demonstration; photoreceiver sensitivity tuning; silicon-based photodetector; thresholding circuit; very large scale integration logic circuits; CMOS process; CMOS technology; Optical amplifiers; Optical arrays; Optical device fabrication; Optical sensors; Photodetectors; Semiconductor optical amplifiers; Stimulated emission; Tuned circuits;
Journal_Title :
Photonics Technology Letters, IEEE
