Optoelectronic generation and modulation of millimeter waves in a single InP-GaInAs photo heterojunction bipolar transistor

Author

Bilenca, A. ; Lasri, J. ; Eisenstein, G. ; Ritter, D. ; Sidorov, V. ; Cohen, S. ; Goldgeier, P. ; Orenstein, M.

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

Volume

12

Issue

9

fYear

2000

Firstpage

1240

Lastpage

1242

Abstract

We demonstrate the use of an InP-GaInAs photo heterojunction bipolar transistor as a millimeter wave transducer. A 45-GHz carrier signal is generated by mixing two optical signals impinging on the optical port at the base. Simultaneously, the base electrode is fed by an electrical signal which modulates the 45 GHz carrier. Analog modulation capabilities were characterized in terms of the modulation depth and linearity while digital modulation was evaluated by a measurement of bit error rates.

Keywords

III-V semiconductors; electro-optical modulation; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; microwave photonics; 45 GHz; GHz carrier signal; InP-GaInAs; InP-GaInAs photo heterojunction bipolar transistor; analog modulation; bit error rate measurement; digital modulation; electrical signal modulation; millimeter wave transducer; millimeter waves; modulation depth; optical signal mixing; optoelectronic generation; optoelectronic modulation; Bit error rate; Digital modulation; Electrodes; Heterojunction bipolar transistors; Linearity; Millimeter wave transistors; Optical mixing; Optical modulation; Signal generators; Transducers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.874248

Filename

874248