Impact of Quantum Confinement on Short-Channel Effects for Ultrathin-Body Germanium-on-Insulator MOSFETs

This letter investigates the impact of quantum confinement (QC) on the short-channel effect (SCE) of ultrathin-body (UTB) and thin-buried-oxide germanium-on-insulator (GeOI) MOSFETs using an analytical solution of Schrödinger equation verified with TCAD simulation. Our study indicates that, although the QC effect increases the threshold voltage (V_th) roll-off when the channel thickness (T_ch) is larger than a critical value (T_ch,crit), it may decrease the V_th roll-off of GeOI MOSFETs when the T_ch is smaller than T_ch,crit. Since Ge and Si channels exhibit different degrees of confinement and T_ch,crit, the impact of QC must be considered when one-to-one comparisons between UTB GeOI and Si-on-insulator MOSFETs regarding the SCE are made.