• DocumentCode
    1392298
  • Title

    Demonstration of a Room-Temperature InP-Based Photodetector Operating Beyond 3 \\mu m

  • Author

    Chen, Baile ; Jiang, W.Y. ; Yuan, Jinrong ; Holmes, Archie L., Jr. ; Onat, Bora M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
  • Volume
    23
  • Issue
    4
  • fYear
    2011
  • Firstpage
    218
  • Lastpage
    220
  • Abstract
    An InP-based p-i-n photodiode with optical response out to 3.4 μm was designed and grown by molecular beam epitaxy (MBE). One hundred pairs of 7-nm In0.34Ga0.66As/5-nm GaAs0.25Sb0.75 quantum wells strain compensated to InP were used as the absorption region. The device showed a dark current density of 9.6 mA/cm2 under -0.5-V reverse bias, a responsivity of 0.03 A/W, and a detectivity of 2.0 × 108 cm·Hz1/2·W-1 at 3 μm at 290 K.
  • Keywords
    III-V semiconductors; compensation; current density; gallium arsenide; indium compounds; molecular beam epitaxial growth; p-i-n photodiodes; photodetectors; semiconductor quantum wells; GaAs0.25Sb0.75; In0.34Ga0.66As; InP; absorption region; dark current density; molecular beam epitaxy; optical response; p-i-n photodiode; photodetector; semiconductor quantum wells; strain compensation; temperature 290 K; temperature 293 K to 298 K; wavelength 3 mum; wavelength 5 nm; wavelength 7 nm; Detectivity; GaAsSb; InGaAs; mid-wavelength infrared (MWIR); photodiode; type-II multiple quantum wells (MQWs);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2010.2096205
  • Filename
    5654538
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1392298