Title :
0.18μm CMOS dual-band low-noise amplifier for ZigBee development
Author :
Xuan, K. ; Tsang, K.F. ; Lee, W.C. ; Lee, S.C.
Author_Institution :
Dept. of Electron. & Inf. Eng., Hong Kong Polytech. Univ., Kowloon, China
Abstract :
A fully integrated dual-band (868/915 MHz and 2.4 GHz) low-noise amplifier is designed using 0.18 m RFCMOS technology for ZigBee development. In both bands, achieved gains are better than 15 dB and the resulting noise figures are better than 2.0 dB. The input and the output reflections are measured to be better than 10 dB in both bands. By tuning varactors in input and output LC tanks, frequency drifts due to unexpected parasitics and process variations are easily compensated. The amplifier works at 1.2 V supply voltage with 10 mA current dissipation.
Keywords :
CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; integrated circuit noise; low noise amplifiers; varactors; CMOS dual-band low-noise amplifier; RFCMOS technology; ZigBee development; current 10 mA; frequency 2.4 GHz; frequency 868 MHz; frequency 915 MHz; fully integrated dual-band amplifier; fully integrated low-noise amplifier; input LC tanks; input reflections; noise figures; output LC tanks; output reflections; size 0.18 mum; varactors; voltage 1.2 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.2448
