DocumentCode
1392882
Title
Design of narrow-linewidth phase-shifted distributed feedback lasers
Author
Correc, P.
Author_Institution
Lab. de Bagneux, CNET, Bagneux, France
Volume
135
Issue
1
fYear
1988
fDate
2/1/1988 12:00:00 AM
Firstpage
64
Lastpage
67
Abstract
By taking into account the practical constraints put on the bias current of a stripe geometry laser, the author has calculated the minimum linewidth of a InGaAsP/InP phase-shifted distributed feedback laser, corresponding to the maximum available output power. Plots useful for the design of optimised structures have been obtained showing that high coupling coefficients are not always desirable
Keywords
distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; spectral line breadth; InGaAsP-InP; bias current; narrow-linewidth phase-shifted distributed feedback lasers; semiconductor;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings J
Publisher
iet
ISSN
0267-3932
Type
jour
Filename
6833
Link To Document