Title :
High repetition rate operation of bistable laser diodes
Author :
Odagawa, T. ; Machida, T. ; Sanada, T. ; Nakai, K. ; Wakao, K. ; Yamakoshi, S.
Author_Institution :
Fujitsu Lab. Ltd., Atsugi, Japan
fDate :
4/1/1991 12:00:00 AM
Abstract :
The authors obtained a bistable laser diode with a saturable absorber operating at a high repetition rate. The laser was made with a semi-insulating layer which realized low carrier density in the reset region and low parasitic capacitance (3 pF over 300 μm). Low carrier density in the reset region where there is high differential gain (loss) reduces the carrier density changes caused by electrical reset and optical set signals. These enable flip-flop operation at a 2.5 Gb/s repetition rate
Keywords :
flip-flops; optical bistability; optical logic; optical saturable absorption; semiconductor junction lasers; 2.5 Gbit/s; 3 pF; bistable laser diodes; carrier density changes; electrical reset; flip-flop operation; high differential gain; high repetition rate; low carrier density; low parasitic capacitance; optical set signals; repetition rate; reset region; saturable absorber; semi-insulating layer;
Journal_Title :
Optoelectronics, IEE Proceedings J
