Evaluation of semiconductor optical parameters for laser diodes

Author

Estéban, M. ; Arnaud, J.

Author_Institution

Equipe de Microoptoelectronique de Montpellier, Univ. de Montpellier II, France

Volume

138

Issue

2

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

79

Lastpage

86

Abstract

The small-signal modulation and noise properties (electrical voltage, optical power and phase) of laser diodes depend on ten real parameters relating to the semiconductor material employed. Among these, the phase-amplitude coupling factor α is of particular importance. These parameters are evaluated for GaAs at 0.87 μm, GaInAsP at 1.55 μm and InAsSb at 3.87 μm at room temperature. Revised expressions for the optical gain are used. The light-hole contribution, the plasma effect and band-gap shrinkage are taken into account. The latter leads to a significant reduction of α, particularly below the peak-gain frequency. The α-factors for the three materials listed above are found to be, respectively, 2.9, 3.85 and 8.3 for conventional diodes

Keywords

electron device noise; laser variables measurement; optical modulation; semiconductor junction lasers; 0.87 micron; 1.55 micron; 3.87 micron; GaAs; GaInAsP; InAsSb; band-gap shrinkage; electrical voltage; laser diode phase; laser diodes; light-hole contribution; noise; optical gain; optical power; peak-gain frequency; phase-amplitude coupling factor; plasma effect; room temperature; semiconductor material; semiconductor optical parameters; small-signal modulation;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings J

Publisher

iet

ISSN

0267-3932

Type

jour

Filename

68363