DocumentCode
1393215
Title
Impurity induced disordering in InGaAs/InGaAlAs quantum wells using implanted fluorine and boron
Author
Bryce, A.C. ; Marsh, J.H. ; Gwilliam, R. ; Glew, R.W.
Author_Institution
Dept. of Electron & Electr. Eng., Galsgow Univ., UK
Volume
138
Issue
2
fYear
1991
fDate
4/1/1991 12:00:00 AM
Firstpage
87
Lastpage
90
Abstract
Impurity induced disordering of an InGaAs/InGaAlAs quantum well structure has been investigated using boron and fluorine. The impurities were introduced by ion implantation and followed by thermal annealing. Small blue shifts in the exciton peak were observed in the boron implanted material. Much larger blue shifts, over 40 meV, were observed in the fluorine implanted material. At annealing temperatures greater than 650°C, red shifts in the exciton peak of unimplanted material were measured
Keywords
III-V semiconductors; aluminium compounds; excitons; gallium arsenide; impurity and defect absorption spectra of inorganic solids; indium compounds; ion implantation; semiconductor quantum wells; 650 degC; IOE; InGaAs-InGaAlAs; annealing temperatures; blue shifts; exciton peak; implanted material; impurity induced disordering; ion implantation; optical modulators; photoluminescence; quantum wells; red shifts; thermal annealing;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings J
Publisher
iet
ISSN
0267-3932
Type
jour
Filename
68364
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