DocumentCode :
1393254
Title :
Quantum Transport and Current Distribution at Radio Frequency in Multiwall Carbon Nanotubes
Author :
Kashcheyevs, Vyacheslavs ; Tamburrano, Alessio ; Sarto, Maria Sabrina
Author_Institution :
Inst. for Solid States Phys., Univ. of Latvia, Riga, Latvia
Volume :
11
Issue :
3
fYear :
2012
fDate :
5/1/2012 12:00:00 AM
Firstpage :
492
Lastpage :
500
Abstract :
Multiwall carbon nanotubes represent a low-dimensional material that could serve as building blocks for future carbon-based nanoelectronics. The understanding of the electromagnetic performances at radio frequency of these materials for use in nanointerconnects is strictly related to the analysis of their transport properties as function of the working conditions. In this paper, we present an explicit expression of the conducting channels as function of diameter, temperature, doping, and supply voltage for both metallic and semiconducting carbon nanotubes. The proposed formula is based on the Dirac cone approximation of the conducting band energy of graphene nearby the Fermi points, combined with the Landauer-Buttiker formalism. Simplified expressions are also obtained in case of large diameter nanotubes. We show that the conductance, kinetic inductance, and quantum capacitance of each carbon shell are strongly affected by those parameters, and, consequently, that the current distribution among the shells of a multiwall carbon nanotube at radio frequency could be optimized with the proper definition of the nanotube configuration versus the working conditions.
Keywords :
Fermi level; capacitance; carbon nanotubes; conduction bands; electrical conductivity; high-frequency effects; semiconductor nanotubes; C; Dirac cone approximation; Fermi points; Landauer-Buttiker formalism; carbon-based nanoelectronics; conducting band energy; conducting channels; current distribution phenomenon; doping; electromagnetic performance; kinetic inductance; low-dimensional material; metallic carbon nanotubes; multiwall carbon nanotubes; nanointerconnects; quantum capacitance; quantum transport phenomenon; semiconducting carbon nanotubes; Approximation methods; Electron tubes; Equations; Integrated circuit interconnections; Mathematical model; Nanotubes; Quantum capacitance; Carbon nanotube (CNT); conducting channel; current distribution; quantum transport; radio frequency (RF);
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2011.2178610
Filename :
6097061
Link To Document :
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