• DocumentCode
    1393255
  • Title

    GaAs/AlGaAs quantum well laser for high-speed applications

  • Author

    Lang, H. ; Wolf, H.D. ; Korte, L. ; Hedrich, H. ; Hoyler, C. ; Thanner, C.

  • Author_Institution
    Siemens AG, Corp. Res. & Dev., Munich, Germany
  • Volume
    138
  • Issue
    2
  • fYear
    1991
  • fDate
    4/1/1991 12:00:00 AM
  • Firstpage
    117
  • Lastpage
    121
  • Abstract
    GaAs/AlGaAs multiple quantum well ridge waveguide laser diodes have been fabricated using MOVPE and a dry etch process for the ridge structure. The threshold currents of these lasers are 10-15 mA at 25°C and the characteristic temperature T0 exceeds 200 K. Modulation bandwidths of up to 14 GHz and relaxation oscillation frequencies of up to 36 GHz are achieved with these devices. The modulation bandwidth exceeds 10 GHz in a temperature range up to 80°C
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; optical communication equipment; semiconductor junction lasers; 10 GHz; 10 to 15 mA; 14 GHz; 200 K; 25 degC; 36 GHz; GaAs-AlGaAs; MOVPE; dry etch process; high-speed applications; modulation bandwidths; multiple quantum well ridge waveguide laser diodes; quantum well laser; relaxation oscillation frequencies; threshold currents;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings J
  • Publisher
    iet
  • ISSN
    0267-3932
  • Type

    jour

  • Filename
    68370
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1393255