• DocumentCode
    1393403
  • Title

    Digital Computation in Subthreshold Region for Ultralow-Power Operation: A Device–Circuit–Architecture Codesign Perspective

  • Author

    Gupta, Sumeet Kumar ; Raychowdhury, Arijit ; Roy, Kaushik

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • Volume
    98
  • Issue
    2
  • fYear
    2010
  • Firstpage
    160
  • Lastpage
    190
  • Abstract
    Ultralow-power dissipation can be achieved by operating digital circuits with scaled supply voltages, albeit with degradation in speed and increased susceptibility to parameter variations. However, operating digital logic and memory circuits in the subthreshold region (supply voltage less than the transistor threshold voltage) for ultralow-power operations requires device, circuit as well as architectural design optimizations, different from the conventional superthreshold design. This paper analyzes such optimizations from energy dissipation point of view and shows that it is feasible to achieve robust operation of ultralow-voltage systems. Operation with power supply as low as 60 mV is demonstrated. Techniques to reduce the impact of process variations on subthreshold circuits are also discussed. In addition, it is shown that subthreshold leakage current can be useful for other applications like thermal sensors.
  • Keywords
    SRAM chips; leakage currents; logic circuits; low-power electronics; power electronics; SRAM; architectural design optimizations; conventional superthreshold design; device-circuit-architecture codesign; digital circuits; energy dissipation; memory circuits; operating digital logic; scaled supply voltages; subthreshold circuit variation; subthreshold leakage current; thermal sensors; ultralow-power dissipation; ultralow-power operation; ultralow-voltage systems; Degradation; Design optimization; Digital circuits; Energy dissipation; Logic circuits; Logic design; Logic devices; Power supplies; Robustness; Threshold voltage; Adaptive beta ratio modulation; SRAM; double gate MOSFETs; low-voltage design; parallelization and pipelining; parameter variations; steep devices; subthreshold logic;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/JPROC.2009.2035060
  • Filename
    5395762