DocumentCode
1393607
Title
32×32 two-dimensional array of vertical to surface transmission electrophotonic devices with a pnpn structure
Author
Kurihara, K. ; Tashiro, Y. ; Ogura, I. ; Sugimoto, M. ; Kasahara, K.
Author_Institution
Opto-Electron. Res. Lab., NEC Corp., Ibaraki, Japan
Volume
138
Issue
2
fYear
1991
fDate
4/1/1991 12:00:00 AM
Firstpage
161
Lastpage
163
Abstract
A novel electrophotonic mode of operation reduces both the memory holding power and the optical switching energy to 26 fJ at a 9 ns writing period in vertical to surface transmission electrophotonic devices with a pnpn structure (pnpn -VSTEPs). An integration of 1024 pnpn elements in a two-dimensional matrix has been demonstrated for these electrophotonic operations by using a thick metal line process and a low temperature dielectric film deposition for improving characteristics uniformity
Keywords
electro-optical devices; integrated optoelectronics; 26 fJ; 2D electrophotonic device array; 9 ns; electrophotonic operations; low temperature dielectric film deposition; memory holding power; optical switching energy; pnpn structure; thick metal line process; vertical to surface transmission electrophotonic devices; writing period;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings J
Publisher
iet
ISSN
0267-3932
Type
jour
Filename
68377
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