Silicon carbide: its nonabrasive electrical properties and applications

Author

Babula, Andrew J.

Author_Institution

Loyola Marymount Univ., Los Angeles, CA, USA

Volume

16

Issue

1

fYear

1997

Firstpage

27

Lastpage

30

Abstract

Silicon carbide (SiC) has been around for over a century. However, only in the past two to three decades has its semiconducting properties been sufficiently studied and applied. Its many advantages, with its ability to withstand high temperatures being the most prominent, are making silicon carbide a choice for new applications and an improved substitute for traditional electronic materials

Keywords

bonds (chemical); ceramics; crystal growth; crystal structure; electrical conductivity; impurities; lattice constants; polymorphism; refractories; semiconductor growth; semiconductor materials; silicon compounds; thermal stability; SiC; UV detection; applications; avionics; bonding structure; coloured screen displays; crystal growth; crystal structures; crystallographic features; diamond-type structure; electronic materials; high temperature stability; lattice parameters; nonabrasive electrical properties; polytypes; refractory; semiconducting properties; Atomic layer deposition; Bonding; Crystals; Lattices; Material properties; Shape; Silicon carbide; Stacking; Temperature; Zinc;

fLanguage

English

Journal_Title

Potentials, IEEE

Publisher

ieee

ISSN

0278-6648

Type

jour

DOI

10.1109/45.565611

Filename

565611